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Title: Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b']dithiophene. Author: Kubozono Y, Hyodo K, Hamao S, Shimo Y, Mori H, Nishihara Y. Journal: Sci Rep; 2016 Dec 06; 6():38535. PubMed ID: 27922104. Abstract: A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b']dithiophene ((C12H25)2-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm2 V-1 s-1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm2 V-1 s-1, when a 150 nm-thick ZrO2 gate dielectric was used. This implies that (C12H25)2-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.[Abstract] [Full Text] [Related] [New Search]