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  • Title: Janus monolayers of transition metal dichalcogenides.
    Author: Lu AY, Zhu H, Xiao J, Chuu CP, Han Y, Chiu MH, Cheng CC, Yang CW, Wei KH, Yang Y, Wang Y, Sokaras D, Nordlund D, Yang P, Muller DA, Chou MY, Zhang X, Li LJ.
    Journal: Nat Nanotechnol; 2017 Aug; 12(8):744-749. PubMed ID: 28507333.
    Abstract:
    Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.
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