These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Search MEDLINE/PubMed

  • Title: Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces.
    Author: Gurbán S, Petrik P, Serényi M, Sulyok A, Menyhárd M, Baradács E, Parditka B, Cserháti C, Langer GA, Erdélyi Z.
    Journal: Sci Rep; 2018 Feb 01; 8(1):2124. PubMed ID: 29391562.
    Abstract:
    Al2O3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10-9 mbar) and formation of amorphous SiO2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al2O3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO2 rich layer has grown into the Al2O3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.
    [Abstract] [Full Text] [Related] [New Search]