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  • Title: A graphene/single GaAs nanowire Schottky junction photovoltaic device.
    Author: Luo Y, Yan X, Zhang J, Li B, Wu Y, Lu Q, Jin C, Zhang X, Ren X.
    Journal: Nanoscale; 2018 May 17; 10(19):9212-9217. PubMed ID: 29726561.
    Abstract:
    A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.
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