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  • Title: Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe.
    Author: Pan H, Tong B, Yu J, Wang J, Fu D, Zhang S, Wu B, Wan X, Zhang C, Wang X, Song F.
    Journal: Sci Rep; 2018 Jun 19; 8(1):9340. PubMed ID: 29921950.
    Abstract:
    The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising applications of unusual magnetoresistance (MR) properties. Herein, we systematically investigated the anisotropic MR in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, three-dimensional (3D) MR shows the strong anisotropy. The MR ratio of maximum and minimum directions reaches 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, indicating the quasi-2D electronic structures. This is further confirmed by the angular dependent Shubnikov-de Haas oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our finding sheds light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe.
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