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  • Title: Ubiquitous Spin-Orbit Coupling in a Screw Dislocation with High Spin Coherency.
    Author: Hu L, Huang H, Wang Z, Jiang W, Ni X, Zhou Y, Zielasek V, Lagally MG, Huang B, Liu F.
    Journal: Phys Rev Lett; 2018 Aug 10; 121(6):066401. PubMed ID: 30141639.
    Abstract:
    We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces or interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SOC. Remarkably, the spin texture of 1D SD-SOC, pertaining to the inherent symmetry of SD, exhibits a significantly higher degree of spin coherency than the 2D RD-SOC. Moreover, the 1D SD-SOC can be tuned by ionicity in compound semiconductors to ideally suppress spin relaxation, as demonstrated by comparative first-principles calculations of SDs in Si/Ge, GaAs, and SiC. Our findings therefore open a new door to manipulating spin transport in semiconductors by taking advantage of an otherwise detrimental topological defect.
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