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Pubmed for Handhelds

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  • Title: Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.
    Author: Na JW, Kim HJ, Hong S, Kim HJ.
    Journal: ACS Appl Mater Interfaces; 2018 Oct 31; 10(43):37207-37215. PubMed ID: 30338976.
    Abstract:
    A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm2 V-1 s-1, a subthreshold swing of 0.38 V dec-1, and an on/off ratio of 1.08 × 108. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage ( Vth) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.
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