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  • Title: Passive Q-switching induced by few-layer MoTe2 in an Yb:YCOB microchip laser.
    Author: Ma Y, Tian K, Dou X, Yang J, Li Y, Han W, Xu H, Liu J.
    Journal: Opt Express; 2018 Sep 17; 26(19):25147-25155. PubMed ID: 30469620.
    Abstract:
    We report on passive Q-switching action induced by a few-layer MoTe2 saturable absorber in an Yb:YCa4O(BO3)3 (Yb:YCOB) microchip laser. With a sapphire-based few-layer MoTe2 incorporated into the 4 mm long plane-parallel resonator of the Yb:YCOB microchip laser, efficient stable passively Q-switched operation was achieved under output couplings of 40%-70%, producing, at an incident pump power of 5.0 W, an average output power of 1.58 W at a repetition rate of 704 kHz with a slope efficiency of 36%; the pulse energy and peak power were respectively 2.25 μJ and 40.8 W, while the shortest pulse duration obtained was 52 ns.
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