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  • Title: Competing Fractional Quantum Hall and Electron Solid Phases in Graphene.
    Author: Chen S, Ribeiro-Palau R, Yang K, Watanabe K, Taniguchi T, Hone J, Goerbig MO, Dean CR.
    Journal: Phys Rev Lett; 2019 Jan 18; 122(2):026802. PubMed ID: 30720304.
    Abstract:
    We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N=2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the B-T phase diagram of the electron solid phase. The hierarchy of reentrant states suggests spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.
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