These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Search MEDLINE/PubMed

  • Title: The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage.
    Author: Park SJ, Yu BS, Ha TJ.
    Journal: J Nanosci Nanotechnol; 2019 Oct 01; 19(10):6178-6182. PubMed ID: 31026932.
    Abstract:
    High dielectric constant (high-k) materials have been extensively investigated for low-voltage operating electronics. In recent years, solution-processed high-k dielectrics have been of technological interests in low fabrication cost, large area process and good film quality, compared to the vacuum-process technology. In this paper, we demonstrate solution-processed aluminum oxide (Al2O3) dielectrics for high performance solution-processed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) operating at low voltage. The material and electrical properties of Al2O3 dielectrics fabricated at different post-annealing temperatures were analyzed by atomic force microscopy, scanning electron microscopy, X-ray diffraction and capacitance-voltage measurements. We also investigate the effect of crystalline Al2O3 dielectrics on the device performance of solution-processed IGZO TFTs. It is concluded that improved interfacial characteristics of crystalline Al2O3 dielectrics enhance the device performance of solution-processed IGZO TFTs operating at 3 V.
    [Abstract] [Full Text] [Related] [New Search]