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  • Title: PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment.
    Author: Xiao J, Liu J, Sun K, Zhao Y, Shao Z, Liu X, Yuan Y, Li Y, Xie H, Song F, Gao Y, Huang H.
    Journal: J Phys Chem Lett; 2019 Aug 01; 10(15):4203-4208. PubMed ID: 31291727.
    Abstract:
    van der Waals (vdW) epitaxy offers a promising strategy without lattice and processing constraints to prepare atomically clean and electronically sharp interfaces for fundamental studies and electronic device demonstrations. Herein, PbI2 was thermally deposited at high-vacuum conditions onto CVD-grown monolayer MoS2 flakes in a vdW epitaxial manner to form 3D-2D heterojunctions, which are promising for vdW epitaxial growth of perovskite films. X-ray diffraction, X-ray photoemission spectroscopy, Raman, and atomic force microscopy measurements reveal the structural properties of the high-quality heterojunctions. Photoluminescence (PL) measurements reveal that the PL emissions from the bottom MoS2 flakes are greatly quenched compared to their as-grown counterparts, which can be ascribed to the band alignment-induced distinct interfacial charge-transfer behaviors. Strong interlayer excitons can be detected at the PbI2/MoS2 interface, indicating an effective type II band alignment, which can be further confirmed by ultraviolet photoemission spectroscopy measurements. The results provide a new material platform for the application of the vdW heterojunctions in electronic and optoelectronic devices.
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