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  • Title: Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate.
    Author: Volk C, Chatterjee A, Ansaloni F, Marcus CM, Kuemmeth F.
    Journal: Nano Lett; 2019 Aug 14; 19(8):5628-5633. PubMed ID: 31339321.
    Abstract:
    Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.
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