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  • Title: Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
    Author: Lestari AD, Putri M, Heo YW, Lee HY.
    Journal: J Nanosci Nanotechnol; 2020 Jan 01; 20(1):252-256. PubMed ID: 31383163.
    Abstract:
    Amorphous oxide semiconductors (AOS) have been studied extensively for the past decade as a possible alternative to polysilicon thin film transistors (TFTs). One such example is amorphous InZnSnO (IZTO), which was used in this study as an active channel layer for TFTs. A 30 nm-thick IZTO film was deposited using RF magnetron sputtering with various oxygen partial pressures, followed by annealing treatment in air at 350 °C. The resulting films showed good optical properties with high transparency of >85% in the visible spectrum, which is important for realizing transparent devices. The amorphous IZTO TFT device showed good performance with a field-effect mobility (μFE) of 29.1 cm²/Vs, threshold voltage (VT) of 0.70 V, on/off current ratio (Ion/Ioff) of ~108, and subthreshold swing (SS) value of 0.12 V/dec. Oxygen incorporation during deposition of the channel layer affected the overall electrical properties of the TFTs, which is associated with the change of interface trap density.
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