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  • Title: Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device.
    Author: Zhang S, Wang R, Wang X, Wei B, Chen B, Wang H, Shi G, Wang F, Jia B, Ouyang Y, Xie F, Fei F, Zhang M, Wang X, Wu D, Wan X, Song F, Zhang H, Wang B.
    Journal: Nano Lett; 2020 Jan 08; 20(1):709-714. PubMed ID: 31838853.
    Abstract:
    Magnetic topological insulator, a platform for realizing quantum anomalous Hall effect, axion state, and other novel quantum transport phenomena, has attracted a lot of interest. Recently, it is proposed that MnBi2Te4 is an intrinsic magnetic topological insulator, which may overcome the disadvantages in the magnetic doped topological insulator, such as disorder. Here we report on the gate-reserved anomalous Hall effect (AHE) in the MnBi2Te4 thin film. By tuning the Fermi level using the top/bottom gate, the AHE loop gradually decreases to zero and the sign is reversed. The positive AHE exhibits distinct coercive fields compared with the negative AHE. It reaches a maximum inside the gap of the Dirac cone, and its amplitude exhibits a linear scaling with the longitudinal conductance. The positive AHE is attributed to the competition of the intrinsic Berry curvature and the extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.
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