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  • Title: Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure.
    Author: Zhu X, Lin F, Zhang Z, Chen X, Huang H, Wang D, Tang J, Fang X, Fang D, Ho JC, Liao L, Wei Z.
    Journal: Nano Lett; 2020 Apr 08; 20(4):2654-2659. PubMed ID: 32101689.
    Abstract:
    Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent. In particular, the G/A/G NW photodetector exhibits a responsivity of 0.57 A/W and a detectivity of 1.83 × 1010 Jones, which are about 7 times higher than those of the pure GaAs NW device. The recombination probability has also been significantly suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure. All of these can evidently demonstrate the importance of the appropriate band structure design to promote photocarrier generation, separation, and collection for high-performance optoelectronic devices.
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