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  • Title: Electrical scattering mechanism evolution in un-doped and halogen-doped Bi2O2Se single crystals.
    Author: Xu L, Luo YC, Lv YY, Zhang YY, Wu YZ, Yao SH, Zhou J, Chen YB, Chen YF.
    Journal: J Phys Condens Matter; 2020 Jun 15; 32(36):. PubMed ID: 32380483.
    Abstract:
    Recently the layered oxide semiconductor Bi2O2Se was hotly explored for its ultrahigh mobility and ultrafast photo-response whose physical origins need to be further explored or elucidated. Here, we have grown halogen (Cl, Br, I) doped and un-doped Bi2O2Se single crystals by a melt-solidification method. Comparative electrical transport characterizations and detailed data-analysis substantiate that the electron-electron scattering is the major source of resistivity in un-doped Bi2O2Se crystals; however, in halogen-doped Bi2O2Se crystals, electron-electron scattering is only effective at low temperature (<60 K) and subsequently electron-phonon-interaction scattering is dominated to resistivity. Hall measurement and analysis show that electron concentration of halogen-doped Bi2O2Se (∼1020cm-3) is one-order higher than un-doped one (∼1019cm-3), but the carrier mobility of halogen-doped Bi2O2Se at 2 K (∼102cm2V-1s-1) is reduced by more than two orders than un-doped ones (∼104cm2V-1s-1). Three kinds of relaxation time (due to the impurity scattering, electron-electron scattering and electron-phonon scattering), calculated by linear-response theory and electron-/phonon-dispersion, are in agreement with experimental results quantitatively. The scattering mechanism evolution from sole electron-electron scattering (un-doped Bi2O2Se) to electron-phonon scattering (doped Bi2O2Se) at high temperature (>60 K) is attributed to the net effect of decreased screened Coulomb-interaction and increased Fermi energy in halogen-doped Bi2O2Se. This work may provide clues of physical origins of superior electrical/photoelectrical properties of Bi2O2Se.
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