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  • Title: Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene.
    Author: Solís-Fernández P, Terao Y, Kawahara K, Nishiyama W, Uwanno T, Lin YC, Yamamoto K, Nakashima H, Nagashio K, Hibino H, Suenaga K, Ago H.
    Journal: ACS Nano; 2020 Jun 23; 14(6):6834-6844. PubMed ID: 32407070.
    Abstract:
    Controlling the stacking order in bilayer graphene (BLG) allows realizing interesting physical properties. In particular, the possibility of tuning the band gap in Bernal-stacked (AB) BLG (AB-BLG) has a great technological importance for electronic and optoelectronic applications. Most of the current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesize highly pure large-area AB-BLG by chemical vapor deposition using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer growth times (99.4% of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements on field-effect transistors using two different device configurations. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a way to control the stacking order of catalytically grown two-dimensional materials.
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