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  • Title: Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS2 Monolayer.
    Author: Husain S, Chen X, Gupta R, Behera N, Kumar P, Edvinsson T, García-Sánchez F, Brucas R, Chaudhary S, Sanyal B, Svedlindh P, Kumar A.
    Journal: Nano Lett; 2020 Sep 09; 20(9):6372-6380. PubMed ID: 32786947.
    Abstract:
    A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9×105ℏ2eΩ-1m-1) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin-orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.
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