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  • Title: Graphene Quantum Dot-Sensitized ZnO-Nanorod/GaN-Nanotower Heterostructure-Based High-Performance UV Photodetectors.
    Author: Goswami L, Aggarwal N, Verma R, Bishnoi S, Husale S, Pandey R, Gupta G.
    Journal: ACS Appl Mater Interfaces; 2020 Oct 14; 12(41):47038-47047. PubMed ID: 32957784.
    Abstract:
    The fabrication of a superior-performance ultraviolet (UV) photodetector utilizing graphene quantum dots (GQDs) as a sensitization agent on a ZnO-nanorod/GaN-nanotower heterostructure has been realized. GQD sensitization displays substantial impact on the electrical as well as the optical performance of a heterojunction UV photodetector. The GQD sensitization stimulates charge carriers in both ZnO and GaN and allows energy band alignment, which is realized by a spontaneous time-correlated transient response. The fabricated device demonstrates an excellent responsivity of 3.2 × 103 A/W at -6 V and displays an enhancement of ∼265% compared to its bare counterpart. In addition, the fabricated heterostructure UV photodetector exhibits a very high external quantum efficiency of 1.2 × 106%, better switching speed, and signal detection capability as low as ∼50 fW.
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