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  • Title: Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon.
    Author: Lu Y, Cao V, Liao M, Li W, Tang M, Li A, Smowton P, Seeds A, Liu H, Chen S.
    Journal: Opt Lett; 2020 Oct 01; 45(19):5468-5471. PubMed ID: 33001927.
    Abstract:
    High-power, broadband quantum-dot (QD) superluminescent diodes (SLDs) are ideal light sources for optical coherence tomography (OCT) imaging systems but have previously mainly been fabricated on native GaAs- or InP-based substrates. Recently, significant progress has been made to emigrate QD SLDs from native substrates to silicon substrates. Here, we demonstrate electrically pumped continuous-wave InAs QD SLDs monolithically grown on silicon substrates with significantly improved performance thanks to the achievement of a low density of defects in the III-V epilayers. The fabricated narrow-ridge-waveguide device exhibits a maximum 3 dB bandwidth of 103 nm emission spectrum centered at the O-band together with a maximum single facet output power of 3.8 mW at room temperature. The silicon-based SLD has been assessed for application in an OCT system. Under optimized conditions, a predicted axial resolution of ∼5.3µm is achieved with a corresponding output power of 0.66 mW/facet.
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