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  • Title: A wideband cryogenic microwave low-noise amplifier.
    Author: Ivanov BI, Volkhin DI, Novikov IL, Pitsun DK, Moskalev DO, Rodionov IA, Il'ichev E, Vostretsov AG.
    Journal: Beilstein J Nanotechnol; 2020; 11():1484-1491. PubMed ID: 33083196.
    Abstract:
    A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
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