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Title: Mid-infrared frequency doubling using strip-loaded silicon nitride on epitaxial barium titanate thin film waveguides. Author: Zhou J, Liu M, Lu M, Lin PT. Journal: Opt Lett; 2020 Dec 01; 45(23):6358-6361. PubMed ID: 33258811. Abstract: Broadband mid-infrared (mid-IR) frequency doubling was demonstrated using nonlinear barium titanate (BTO) thin films. The device has a strip-loaded waveguide structure consisting of top silicon nitride (SiN) strips and an underneath BTO guiding layer. The epitaxial BTO was deposited on a strontium titanate (STO) substrate by pulsed-laser deposition. Through a SiN grating coupler, the pumping mid-IR light at wavelength λ=3.30-3.45µm was coupled into the nonlinear BTO layer, where the spectrum of the near-infrared (NIR) second-harmonic generation was characterized. The developed BTO waveguides provide a platform for mid-IR nonlinear integrated photonics and on-chip quantum optics.[Abstract] [Full Text] [Related] [New Search]