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  • Title: Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material.
    Author: An BS.
    Journal: Appl Microsc; 2019 Dec 17; 49(1):17. PubMed ID: 33580433.
    Abstract:
    The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
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