These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Search MEDLINE/PubMed

  • Title: Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device.
    Author: Cho MS, Mun HJ, Lee SH, An HD, Park J, Jang J, Bae JH, Kang IM.
    Journal: J Nanosci Nanotechnol; 2021 Aug 01; 21(8):4320-4324. PubMed ID: 33714321.
    Abstract:
    In this study, a high-performance vertical gallium nitride (GaN) power transistor is designed by using two-dimensional technology computer-aided design simulator. The vertical GaN transistor is used to analyze the DC/DC boost converter. The systems requiring high voltages of 1000 V or more, such as electric vehicles, need wide devices to achieve a high breakdown voltage when using conventional power devices. However, vertical GaN transistors can be fabricated with small device area and high breakdown voltage. The proposed device has an off-current of 4.72×10-10 A/cm², an on-current of 17,528 A/cm², and a high breakdown voltage of 1,265 V due to good gate controllability and the very long gate-to-drain length. Using the designed device, a boost converter that doubles the input voltage was constructed and is characteristics were examined. The designed boost converter obtained an output voltage of 1,951 V and the voltage conversion efficiency was considerably high at 97.55% when the input voltage was 1,000 V.
    [Abstract] [Full Text] [Related] [New Search]