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Title: Low Vπ thin-film lithium niobate modulator fabricated with photolithography. Author: Liu Y, Li H, Liu J, Tan S, Lu Q, Guo W. Journal: Opt Express; 2021 Mar 01; 29(5):6320-6329. PubMed ID: 33726156. Abstract: Thin-film lithium niobate (TFLN) modulators are expected to be an ideal solution to achieve a super-wide modulation bandwidth needed by the next-generation optical communication system. To improve the performance, especially to reduce the driving voltage, we have carried out a detailed design of the TFLN push-pull modulator by calculating 2D maps of the optical losses and Vπ for different ridge waveguide depths and electrode gaps. Afterwards the modulator with travelling wave electrodes was fabricated through i-line photolithography and then characterized. The measured Vπ for a modulator with 5-mm modulation arm length is 3.5 V, corresponding to voltage-length product of 1.75 V·cm, which is the lowest among similar modulators as far as we know. And the measured electro-optic response has a 3-dB bandwidth beyond 40 GHz, which is the limitation of our measurement capability. The detailed design, fabrication and measurement results are presented.[Abstract] [Full Text] [Related] [New Search]