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  • Title: Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling.
    Author: Zhang D, Bapna M, Jiang W, Sousa D, Liao YC, Zhao Z, Lv Y, Sahu P, Lyu D, Naeemi A, Low T, Majetich SA, Wang JP.
    Journal: Nano Lett; 2022 Jan 26; 22(2):622-629. PubMed ID: 34982564.
    Abstract:
    Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of the ferromagnetic layer via the electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here, we demonstrate a bipolar electric field effect switching of 100 nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ∼1.1 × 105 A/cm2, is 1 order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that the electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition of the synthetic antiferromagnetic free layer and generates a fieldlike interlayer exchange coupling torque, which causes the bidirectional magnetization switching of p-MTJs. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications.
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