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  • Title: Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change.
    Author: Feng T, Chen G, Han H, Qiao J.
    Journal: Micromachines (Basel); 2021 Dec 23; 13(1):. PubMed ID: 35056180.
    Abstract:
    The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectivity evolution obtained from dynamic images in combination with a theoretical Drude model and a Two-Temperature model provides new insights on material excitation and ablation process. For all fluences, the reflectivity increased to a temporary stable state after hundreds of femtoseconds. This behavior was predicted using a temperature-dependent refractive index in the Drude model. The increase in velocity of plasma generation with increasing fluence was theoretically predicted by the Two-Temperature model. Two ablation regimes at high fluences (>0.86 J/cm2) were identified through the measured transient reflectivity and ablation crater profile. The simulation shows that the fluence triggering the second ablation regime produces a boiling temperature (silicon, 2628 K).
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