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  • Title: Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics.
    Author: Zhu L, He G, Lv J, Fortunato E, Martins R.
    Journal: RSC Adv; 2018 May 03; 8(30):16788-16799. PubMed ID: 35540525.
    Abstract:
    Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In2O3 thin films and ZrO x gate dielectrics, as well as the fabrication of In2O3-based TFTs. To verify the possible applications of ZrO x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In2O3 TFTs based on ZrO2 dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high μ sat of 4.42 cm2 V-1 s-1, low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large I on/I off of 7.5 × 107, respectively. The as-fabricated In2O3/ZrO x TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.
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