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Title: Current-induced hole spin polarization in a quantum dot via a chiral quasi bound state. Author: Mantsevich VN, Smirnov DS. Journal: Nanoscale Horiz; 2022 Jun 27; 7(7):752-758. PubMed ID: 35593642. Abstract: We put forward a mechanism for the current-induced spin polarization in semiconductor heterostructures, which is based on the complex structure of the valence band. It takes place for a light hole in a quantum dot side-coupled to a quantum wire with heavy holes. In stark contrast with the traditional mechanisms based on the linear in momentum spin-orbit coupling, an exponentially small bias applied to this structure is enough to create the 100% spin polarization in the quantum dot. Microscopically, this effect is related to the formation of the chiral quasi bound states and the spin-dependent tunneling of holes from the quantum wire to the quantum dot. This new concept is equally valid for the GaAs-, Si- and Ge-based nanostructures.[Abstract] [Full Text] [Related] [New Search]