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  • Title: Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction.
    Author: Qin P, Yan H, Wang X, Chen H, Meng Z, Dong J, Zhu M, Cai J, Feng Z, Zhou X, Liu L, Zhang T, Zeng Z, Zhang J, Jiang C, Liu Z.
    Journal: Nature; 2023 Jan; 613(7944):485-489. PubMed ID: 36653565.
    Abstract:
    Antiferromagnetic spintronics1-16 is a rapidly growing field in condensed-matter physics and information technology with potential applications for high-density and ultrafast information devices. However, the practical application of these devices has been largely limited by small electrical outputs at room temperature. Here we describe a room-temperature exchange-bias effect between a collinear antiferromagnet, MnPt, and a non-collinear antiferromagnet, Mn3Pt, which together are similar to a ferromagnet-antiferromagnet exchange-bias system. We use this exotic effect to build all-antiferromagnetic tunnel junctions with large nonvolatile room-temperature magnetoresistance values that reach a maximum of about 100%. Atomistic spin dynamics simulations reveal that uncompensated localized spins at the interface of MnPt produce the exchange bias. First-principles calculations indicate that the remarkable tunnelling magnetoresistance originates from the spin polarization of Mn3Pt in the momentum space. All-antiferromagnetic tunnel junction devices, with nearly vanishing stray fields and strongly enhanced spin dynamics up to the terahertz level, could be important for next-generation highly integrated and ultrafast memory devices7,9,16.
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