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  • Title: Gate-tunable transport in van der Waals topological insulator Bi4Br4nanobelts.
    Author: Wu SL, Ren ZH, Zhang YQ, Li YK, Han JF, Duan JX, Wang ZW, Li CZ, Yao YG.
    Journal: J Phys Condens Matter; 2023 Mar 27; 35(23):. PubMed ID: 36913735.
    Abstract:
    Bi4Br4is a quasi-one-dimensional van der Waals topological insulator with novel electronic properties. Several efforts have been devoted to the understanding of its bulk form, yet it remains a challenge to explore the transport properties in low-dimensional structures due to the difficulty of device fabrication. Here we report for the first time a gate-tunable transport in exfoliated Bi4Br4nanobelts. Notable two-frequency Shubnikov-de Haas oscillations oscillations are discovered at low temperatures, with the low- and high-frequency parts coming from the three-dimensional bulk state and the two-dimensional surface state, respectively. In addition, ambipolar field effect is realized with a longitudinal resistance peak and a sign reverse in the Hall coefficient. Our successful measurements of quantum oscillations and realization of gate-tunable transport lay a foundation for further investigation of novel topological properties and room-temperature quantum spin Hall states in Bi4Br4.
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