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  • Title: Low-Power and Field-Free Perpendicular Magnetic Memory Driven by Topological Insulators.
    Author: Cui B, Chen A, Zhang X, Fang B, Zeng Z, Zhang P, Zhang J, He W, Yu G, Yan P, Han X, Wang KL, Zhang X, Wu H.
    Journal: Adv Mater; 2023 Aug; 35(31):e2302350. PubMed ID: 37141542.
    Abstract:
    Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for low-power SOT-driven magnetic random-access memory (SOT-MRAM). In this work, a functional 3-terminal SOT-MRAM device is demonstrated by integrating the TI [(BiSb)2 Te3 ] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow switching current density of 1.5 × 105  A cm-2 is achieved in the TI-pMTJ device at room temperature, which is 1-2 orders of magnitude lower than that in conventional heavy-metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2 Te3 . Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (>10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.
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