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  • Title: Boosting the photoelectrochemical performance of bismuth vanadate photoanode through homojunction construction.
    Author: Wang H, Wang S, Oo MT, Yang Y, Zhou J, Huang M, Zhang RQ.
    Journal: J Colloid Interface Sci; 2023 Sep 15; 646():687-694. PubMed ID: 37229986.
    Abstract:
    The photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) suffers from sluggish charge mobility and substantial charge recombination losses due to its intrinsic defect. To rectify the problem, we developed a novel approach to prepare an n-n+ type II BVOac-BVOal homojunction with staggered band alignment. This architecture involves a built-in electric field that facilitating the electron-hole separation at the BVOac/BVOal interface. As a result, the BVOac-BVOal homojunction shows superior photocurrent density up to 3.6 mA/cm2 at 1.23 V vs. reversible hydrogen electrode (RHE) with 0.1 M sodium sulfite as the hole scavenger, which is 3 times higher than that of the single-layer BiVO4 photoanode. Unlike the previous efforts that modifying the PEC performance of BiVO4 photoanodes through incorporating heteroatoms, the highly-efficient BVOac-BVOal homojunction was achieved without incorporating any heteroatoms in this work. The remarkable PEC activity of the BVOac-BVOal homojunction highlights the tremendous importance of reducing the charge recombination rate at the interface by constructing the homojunction and offers an effective strategy to form the heteroatoms-free BiVO4 thin film as an efficient photoanode material for practical PEC applications.
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