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  • Title: Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures.
    Author: Eom J, Lee IH, Kee JY, Cho M, Seo J, Suh H, Choi HJ, Sim Y, Chen S, Chang HJ, Baek SH, Petrovic C, Ryu H, Jang C, Kim YD, Yang CH, Seong MJ, Lee JH, Park SY, Choi JW.
    Journal: Nat Commun; 2023 Sep 12; 14(1):5605. PubMed ID: 37699895.
    Abstract:
    We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
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