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  • Title: Full electrical control of multiple resistance states in van der Waals sliding multiferroic tunnel junctions.
    Author: Yang J, Wu B, Zhou J, Lu J, Yang J, Shen L.
    Journal: Nanoscale; 2023 Oct 12; 15(39):16103-16111. PubMed ID: 37751287.
    Abstract:
    The recent development of two-dimensional magnetic and sliding-ferroelectric van der Waals (vdW) materials opens a new way to realize vdW sliding multiferroic tunnel junctions (MFTJs) for low-power nonvolatile memory applications. Here, we propose and investigate full electrical control of four nonvolatile resistance states in sliding MFTJs, Au/CrI3/bilayer h-BN/CrI3-MnBi2Te4/Au, via first principles. We found four stable states associated with different polarization orientations in bilayer h-BN and magnetization alignment in two CrI3 magnetic layers, which can be controlled purely by electrical voltage and current, respectively. The MFTJ has a giant tunneling magnetoresistance (TMR) of ∼10 000% (2000% in the presence of SOC) and a sizeable tunneling electroresistance (TER) of ∼70%. The write performance is explored by spin-transfer-torque calculations which show an impressive low critical current (∼1.5 × 1010 A m-2) to switch the magnetization of the free layer of CrI3, while antiferromagnetic MnBi2Te4 pins the reference layer with a large interfacial exchange coupling.
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