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  • Title: Field-free spin-orbit torque switching in ferromagnetic trilayers at sub-ns timescales.
    Author: Yang Q, Han D, Zhao S, Kang J, Wang F, Lee SC, Lei J, Lee KJ, Park BG, Yang H.
    Journal: Nat Commun; 2024 Feb 28; 15(1):1814. PubMed ID: 38418454.
    Abstract:
    Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. A potential alternative to STT is spin-orbit torque (SOT). However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications.
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