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  • Title: A 26-28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications.
    Author: Ben Hammadi A, Doukkali MA, Descamps P, Niamien C.
    Journal: Sensors (Basel); 2024 Mar 31; 24(7):. PubMed ID: 38610448.
    Abstract:
    This paper presents a high-gain low-noise amplifier (LNA) operating at the 5G mm-wave band. The full design combines two conventional cascode stages: common base (CB) and common emitter (CS). The design technique reduces the miller effect and uses low-voltage supply and low-current-density transistors to simultaneously achieve high gain and low noise figures (NFs). The two-stage LNA topology is analyzed and designed using 0.25 µm SiGe BiCMOS process technology from NXP semiconductors. The measured circuit shows a small signal gain at 26 GHz of 26 dB with a gain error below 1 dB on the entire frequency band (26-28 GHz). The measured average NF is 3.84 dB, demonstrated over the full frequency band under 15 mA current consumption per stage, supplied with a voltage of 3.3 V.
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