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  • Title: Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum.
    Author: Chen G, Xue N, Qi Z, Ma W, Li W, Jin Z, Chen J.
    Journal: Micromachines (Basel); 2024 Apr 12; 15(4):. PubMed ID: 38675327.
    Abstract:
    Electro-optic modulation devices are essential components in the field of integrated optical chips. High-speed, low-loss electro-optic modulation devices represent a key focus for future developments in integrated optical chip technology, and they have seen significant advancements in both commercial and laboratory settings in recent years. Current electro-optic modulation devices typically employ architectures based on thin-film lithium niobate (TFLN), traveling-wave electrodes, and impedance-matching layers, which still suffer from transmission losses and overall design limitations. In this paper, we demonstrate a lithium niobate electro-optic modulation device based on bound states in the continuum, featuring a non-overlay structure. This device exhibits a transmission loss of approximately 1.3 dB/cm, a modulation bandwidth of up to 9.2 GHz, and a minimum half-wave voltage of only 3.3 V.
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