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Title: Tunneling current-controlled spin states in few-layer van der Waals magnets. Author: Fu Z, Samarawickrama PI, Ackerman J, Zhu Y, Mao Z, Watanabe K, Taniguchi T, Wang W, Dahnovsky Y, Wu M, Chien T, Tang J, MacDonald AH, Chen H, Tian J. Journal: Nat Commun; 2024 May 01; 15(1):3630. PubMed ID: 38693113. Abstract: Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.[Abstract] [Full Text] [Related] [New Search]