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Journal Abstract Search

390 related items for PubMed ID: 12908273

  • 1. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
    Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.
    J Nanosci Nanotechnol; 2002; 2(3-4):421-6. PubMed ID: 12908273
    [Abstract] [Full Text] [Related]

  • 2. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.
    J Nanosci Nanotechnol; 2007 Aug; 7(8):2889-93. PubMed ID: 17685312
    [Abstract] [Full Text] [Related]

  • 3. Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures.
    Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J.
    J Nanosci Nanotechnol; 2001 Dec; 1(4):389-92. PubMed ID: 12914079
    [Abstract] [Full Text] [Related]

  • 4. Effects of growth and annealing temperatures on the structural and the optical properties of In0.6Al0.4As/Al0.4Ga0.6As quantum dots.
    Kim SY, Song JD, Han IK, Kim TW.
    J Nanosci Nanotechnol; 2014 Aug; 14(8):5881-4. PubMed ID: 25936020
    [Abstract] [Full Text] [Related]

  • 5. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 6. The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors.
    Jolley G, Fu L, Tan HH, Jagadish C.
    Nanoscale; 2010 Jul; 2(7):1128-33. PubMed ID: 20648338
    [Abstract] [Full Text] [Related]

  • 7. Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy.
    Liang BL, Wang ZM, Wang XY, Lee JH, Mazur YI, Shih CK, Salamo GJ.
    ACS Nano; 2008 Nov 25; 2(11):2219-24. PubMed ID: 19206386
    [Abstract] [Full Text] [Related]

  • 8. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G, Seravalli L, Frigeri P, Franchi S.
    Nanotechnology; 2009 Oct 14; 20(41):415607. PubMed ID: 19762951
    [Abstract] [Full Text] [Related]

  • 9. Strong extinction of a far-field laser beam by a single quantum dot.
    Vamivakas AN, Atatüre M, Dreiser J, Yilmaz ST, Badolato A, Swan AK, Goldberg BB, Imamoglu A, Unlü MS.
    Nano Lett; 2007 Sep 14; 7(9):2892-6. PubMed ID: 17691853
    [Abstract] [Full Text] [Related]

  • 10. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y.
    Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078
    [Abstract] [Full Text] [Related]

  • 11. Morphology and composition of InAs/GaAs quantum dots.
    Heun S, Biasiol G, Grillo V, Carlino E, Sorba L, Golinelli GB, Locatelli A, Mentes TO, Guo FZ.
    J Nanosci Nanotechnol; 2007 Jun 27; 7(6):1721-5. PubMed ID: 17654929
    [Abstract] [Full Text] [Related]

  • 12. Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field.
    Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM.
    Nano Lett; 2007 Jan 27; 7(1):188-93. PubMed ID: 17212462
    [Abstract] [Full Text] [Related]

  • 13. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures.
    Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G.
    Nanotechnology; 2009 Jul 08; 20(27):275703. PubMed ID: 19531853
    [Abstract] [Full Text] [Related]

  • 14. Filling of hole arrays with InAs quantum dots.
    Lee JY, Noordhoek MJ, Smereka P, McKay H, Millunchick JM.
    Nanotechnology; 2009 Jul 15; 20(28):285305. PubMed ID: 19546494
    [Abstract] [Full Text] [Related]

  • 15. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y.
    Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912
    [Abstract] [Full Text] [Related]

  • 16. Theoretical study on controllability of quantum state energy in an InGaAs/GaAs quantum dot buried in InGaAs.
    Mukai K, Nakashima K.
    J Nanosci Nanotechnol; 2006 Dec 10; 6(12):3705-9. PubMed ID: 17256319
    [Abstract] [Full Text] [Related]

  • 17. Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure.
    Zhou X, Chen Y, Xu B.
    Nanoscale Res Lett; 2011 Apr 08; 6(1):317. PubMed ID: 21711820
    [Abstract] [Full Text] [Related]

  • 18. Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing.
    Ling HS, Wang SY, Hsu WC, Lee CP.
    Opt Express; 2012 May 07; 20(10):10484-9. PubMed ID: 22565673
    [Abstract] [Full Text] [Related]

  • 19. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.
    Sormunen J, Riikonen J, Mattila M, Tiilikainen J, Sopanen M, Lipsanen H.
    Nano Lett; 2005 Aug 07; 5(8):1541-3. PubMed ID: 16089485
    [Abstract] [Full Text] [Related]

  • 20. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A, Jiang Q, Tang M, Seeds A, Liu H.
    Opt Express; 2012 Sep 24; 20(20):22181-7. PubMed ID: 23037366
    [Abstract] [Full Text] [Related]

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