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33. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition. Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y. Nanotechnology; 2010 Mar 12; 21(10):105604. PubMed ID: 20160334 [Abstract] [Full Text] [Related]
36. Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures. Beyer J, Wang PH, Buyanova IA, Suraprapapich S, Tu CW, Chen WM. J Phys Condens Matter; 2012 Apr 11; 24(14):145304. PubMed ID: 22417853 [Abstract] [Full Text] [Related]