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133 related items for PubMed ID: 12914079
1. Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Liu XQ, Lu W, Shen SC, Tan HH, Jagadish C, Zou J. J Nanosci Nanotechnol; 2001 Dec; 1(4):389-92. PubMed ID: 12914079 [Abstract] [Full Text] [Related]
2. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well. Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A. J Nanosci Nanotechnol; 2002 Dec; 2(3-4):421-6. PubMed ID: 12908273 [Abstract] [Full Text] [Related]
3. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer. Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA. J Nanosci Nanotechnol; 2007 Aug; 7(8):2889-93. PubMed ID: 17685312 [Abstract] [Full Text] [Related]
4. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates. Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG. J Nanosci Nanotechnol; 2006 Dec; 6(12):3780-3. PubMed ID: 17256330 [Abstract] [Full Text] [Related]
5. The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Jolley G, Fu L, Tan HH, Jagadish C. Nanoscale; 2010 Jul; 2(7):1128-33. PubMed ID: 20648338 [Abstract] [Full Text] [Related]
6. Strong extinction of a far-field laser beam by a single quantum dot. Vamivakas AN, Atatüre M, Dreiser J, Yilmaz ST, Badolato A, Swan AK, Goldberg BB, Imamoglu A, Unlü MS. Nano Lett; 2007 Sep; 7(9):2892-6. PubMed ID: 17691853 [Abstract] [Full Text] [Related]
12. Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots. Kalliakos S, Pellegrini V, Garcia CP, Pinczuk A, Pfeiffer LN, West KW. Nano Lett; 2008 Feb; 8(2):577-81. PubMed ID: 18186660 [Abstract] [Full Text] [Related]
13. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J. Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270 [Abstract] [Full Text] [Related]
14. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber. Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y. Small; 2006 Mar; 2(3):386-9. PubMed ID: 17193056 [No Abstract] [Full Text] [Related]
15. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy. Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP. Nano Lett; 2005 May; 5(5):969-73. PubMed ID: 15884904 [Abstract] [Full Text] [Related]
16. Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy. Fujita K, Yamanishi M, Furuta S, Tanaka K, Edamura T, Kubis T, Klimeck G. Opt Express; 2012 Aug 27; 20(18):20647-58. PubMed ID: 23037112 [Abstract] [Full Text] [Related]
17. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions. Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D. Nano Lett; 2007 Sep 27; 7(9):2724-8. PubMed ID: 17718585 [Abstract] [Full Text] [Related]
18. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy. Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H. Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725 [Abstract] [Full Text] [Related]
19. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires. Heiss M, Ketterer B, Uccelli E, Morante JR, Arbiol J, Fontcuberta i Morral A. Nanotechnology; 2011 May 13; 22(19):195601. PubMed ID: 21430322 [Abstract] [Full Text] [Related]
20. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires. Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G. Small; 2008 Jul 13; 4(7):899-903. PubMed ID: 18504720 [No Abstract] [Full Text] [Related] Page: [Next] [New Search]