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Journal Abstract Search

193 related items for PubMed ID: 16604081

  • 1. Elastically relaxed free-standing strained-silicon nanomembranes.
    Roberts MM, Klein LJ, Savage DE, Slinker KA, Friesen M, Celler G, Eriksson MA, Lagally MG.
    Nat Mater; 2006 May; 5(5):388-93. PubMed ID: 16604081
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  • 3. Symmetry in strain engineering of nanomembranes: making new strained materials.
    Paskiewicz DM, Scott SA, Savage DE, Celler GK, Lagally MG.
    ACS Nano; 2011 Jul 26; 5(7):5532-42. PubMed ID: 21682324
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  • 6. Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGe.
    Kim YK, Yoon KS, Kim JS, Won T.
    J Nanosci Nanotechnol; 2007 Nov 26; 7(11):4084-8. PubMed ID: 18047125
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  • 7. Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications.
    Sookchoo P, Sudradjat FF, Kiefer AM, Durmaz H, Paiella R, Lagally MG.
    ACS Nano; 2013 Mar 26; 7(3):2326-34. PubMed ID: 23402572
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  • 9. [Influence of strain in the Si cap layer of Si/SiGe heterostructure on its Raman spectra].
    Xiao QH, Tu HL.
    Guang Pu Xue Yu Guang Pu Fen Xi; 2005 May 26; 25(5):719-22. PubMed ID: 16128072
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  • 11. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon.
    Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DA, Harris JS.
    Nature; 2005 Oct 27; 437(7063):1334-6. PubMed ID: 16251959
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  • 12. New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET.
    David T, Berbezier I, Aqua JN, Abbarchi M, Ronda A, Pons N, Domart F, Costaganna P, Uren G, Favre L.
    ACS Appl Mater Interfaces; 2021 Jan 13; 13(1):1807-1817. PubMed ID: 33356130
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  • 13. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.
    Pizzi G, Virgilio M, Grosso G.
    Nanotechnology; 2010 Feb 05; 21(5):055202. PubMed ID: 20023310
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  • 17. Strain-release assembly of nanowires on stretchable substrates.
    Xu F, Durham JW, Wiley BJ, Zhu Y.
    ACS Nano; 2011 Feb 22; 5(2):1556-63. PubMed ID: 21288046
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  • 18. New strategies for producing defect free SiGe strained nanolayers.
    David T, Aqua JN, Liu K, Favre L, Ronda A, Abbarchi M, Claude JB, Berbezier I.
    Sci Rep; 2018 Feb 13; 8(1):2891. PubMed ID: 29440693
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