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PUBMED FOR HANDHELDS

Journal Abstract Search


243 related items for PubMed ID: 16895377

  • 1. The controlled growth of GaN nanowires.
    Hersee SD, Sun X, Wang X.
    Nano Lett; 2006 Aug; 6(8):1808-11. PubMed ID: 16895377
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  • 4. Single crystal GaN nanowires.
    Deepak FL, Govindaraj A, Rao CN.
    J Nanosci Nanotechnol; 2001 Sep; 1(3):303-8. PubMed ID: 12914067
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  • 5. Photoluminescence, thermal transport, and breakdown in joule-heated GaN nanowires.
    Westover T, Jones R, Huang JY, Wang G, Lai E, Talin AA.
    Nano Lett; 2009 Jan; 9(1):257-63. PubMed ID: 19090697
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  • 6. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270
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  • 7. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.
    Nano Lett; 2006 Apr; 6(4):599-604. PubMed ID: 16608251
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  • 8. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.
    Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H.
    Nano Lett; 2007 Aug; 7(8):2248-51. PubMed ID: 17602537
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  • 10. Photocatalysis using GaN nanowires.
    Jung HS, Hong YJ, Li Y, Cho J, Kim YJ, Yi GC.
    ACS Nano; 2008 Apr; 2(4):637-42. PubMed ID: 19206593
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  • 11. Investigation on localized states in GaN nanowires.
    Polenta L, Rossi M, Cavallini A, Calarco R, Marso M, Meijers R, Richter T, Stoica T, Lüth H.
    ACS Nano; 2008 Feb; 2(2):287-92. PubMed ID: 19206629
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  • 13. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov; 5(22):2576-80. PubMed ID: 19714732
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  • 17. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.
    Hou WC, Hong FC.
    Nanotechnology; 2009 Feb 04; 20(5):055606. PubMed ID: 19417353
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  • 19. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
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