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243 related items for PubMed ID: 16895377
1. The controlled growth of GaN nanowires. Hersee SD, Sun X, Wang X. Nano Lett; 2006 Aug; 6(8):1808-11. PubMed ID: 16895377 [Abstract] [Full Text] [Related]
4. Single crystal GaN nanowires. Deepak FL, Govindaraj A, Rao CN. J Nanosci Nanotechnol; 2001 Sep; 1(3):303-8. PubMed ID: 12914067 [Abstract] [Full Text] [Related]
5. Photoluminescence, thermal transport, and breakdown in joule-heated GaN nanowires. Westover T, Jones R, Huang JY, Wang G, Lai E, Talin AA. Nano Lett; 2009 Jan; 9(1):257-63. PubMed ID: 19090697 [Abstract] [Full Text] [Related]
6. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J. Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270 [Abstract] [Full Text] [Related]
7. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires. Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA. Nano Lett; 2006 Apr; 6(4):599-604. PubMed ID: 16608251 [Abstract] [Full Text] [Related]
8. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H. Nano Lett; 2007 Aug; 7(8):2248-51. PubMed ID: 17602537 [Abstract] [Full Text] [Related]
10. Photocatalysis using GaN nanowires. Jung HS, Hong YJ, Li Y, Cho J, Kim YJ, Yi GC. ACS Nano; 2008 Apr; 2(4):637-42. PubMed ID: 19206593 [Abstract] [Full Text] [Related]
11. Investigation on localized states in GaN nanowires. Polenta L, Rossi M, Cavallini A, Calarco R, Marso M, Meijers R, Richter T, Stoica T, Lüth H. ACS Nano; 2008 Feb; 2(2):287-92. PubMed ID: 19206629 [Abstract] [Full Text] [Related]
17. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires. Hou WC, Hong FC. Nanotechnology; 2009 Feb 04; 20(5):055606. PubMed ID: 19417353 [Abstract] [Full Text] [Related]