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Journal Abstract Search

185 related items for PubMed ID: 16895379

  • 1. Au-free epitaxial growth of InAs nanowires.
    Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W.
    Nano Lett; 2006 Aug; 6(8):1817-21. PubMed ID: 16895379
    [Abstract] [Full Text] [Related]

  • 2. Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
    Lugani L, Ercolani D, Sorba L, Sibirev NV, Timofeeva MA, Dubrovskii VG.
    Nanotechnology; 2012 Mar 09; 23(9):095602. PubMed ID: 22322330
    [Abstract] [Full Text] [Related]

  • 3. van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene.
    Hong YJ, Lee WH, Wu Y, Ruoff RS, Fukui T.
    Nano Lett; 2012 Mar 14; 12(3):1431-6. PubMed ID: 22324301
    [Abstract] [Full Text] [Related]

  • 4. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.
    Nano Lett; 2007 Oct 14; 7(10):3214-8. PubMed ID: 17867718
    [Abstract] [Full Text] [Related]

  • 5. Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.
    Madhukar A, Lu S, Konkar A, Zhang Y, Ho M, Hughes SM, Alivisatos AP.
    Nano Lett; 2005 Mar 14; 5(3):479-82. PubMed ID: 15755098
    [Abstract] [Full Text] [Related]

  • 6. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.
    Sormunen J, Riikonen J, Mattila M, Tiilikainen J, Sopanen M, Lipsanen H.
    Nano Lett; 2005 Aug 14; 5(8):1541-3. PubMed ID: 16089485
    [Abstract] [Full Text] [Related]

  • 7. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
    Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP.
    Nano Lett; 2005 May 14; 5(5):969-73. PubMed ID: 15884904
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  • 14. III-V nanowire growth mechanism: V/III ratio and temperature effects.
    Dayeh SA, Yu ET, Wang D.
    Nano Lett; 2007 Aug 14; 7(8):2486-90. PubMed ID: 17608541
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  • 15. Correlating the nanostructure and electronic properties of InAs nanowires.
    Schroer MD, Petta JR.
    Nano Lett; 2010 May 12; 10(5):1618-22. PubMed ID: 20384350
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  • 16. Fabrication of gold nanowires by electric-field-induced scanning probe lithography and in situ chemical development.
    Lee WK, Chen S, Chilkoti A, Zauscher S.
    Small; 2007 Feb 12; 3(2):249-54. PubMed ID: 17199247
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  • 17. Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.
    Bell DJ, Dong L, Nelson BJ, Golling M, Zhang L, Grützmacher D.
    Nano Lett; 2006 Apr 12; 6(4):725-9. PubMed ID: 16608272
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  • 18. Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.
    Eymery J, Rieutord F, Favre-Nicolin V, Robach O, Niquet YM, Fröberg L, Mårtensson T, Samuelson L.
    Nano Lett; 2007 Sep 12; 7(9):2596-601. PubMed ID: 17722944
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  • 19. Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.
    Hong YJ, Yang JW, Lee WH, Ruoff RS, Kim KS, Fukui T.
    Adv Mater; 2013 Dec 17; 25(47):6847-53. PubMed ID: 24115285
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  • 20. Control of Si nanowire growth by oxygen.
    Kodambaka S, Hannon JB, Tromp RM, Ross FM.
    Nano Lett; 2006 Jun 17; 6(6):1292-6. PubMed ID: 16771597
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