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Journal Abstract Search

188 related items for PubMed ID: 16968038

  • 1. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 2. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 3. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 4. Structure and elemental distribution of (Ga,Mn)N nanowires.
    Urban A, Malindretos J, Seibt M, Rizzi A.
    Nano Lett; 2011 Feb 09; 11(2):398-401. PubMed ID: 21171626
    [Abstract] [Full Text] [Related]

  • 5. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 09; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 6. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 7. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct 12; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 8. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr 12; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 9. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 10. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 12; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 11. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 12; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 12. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

  • 13. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar 10; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 14. Effects of gold diffusion on n-type doping of GaAs nanowires.
    Tambe MJ, Ren S, Gradecak S.
    Nano Lett; 2010 Nov 10; 10(11):4584-9. PubMed ID: 20939583
    [Abstract] [Full Text] [Related]

  • 15. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.
    Nano Lett; 2006 Apr 10; 6(4):599-604. PubMed ID: 16608251
    [Abstract] [Full Text] [Related]

  • 16. Electrical and optical characterization of surface passivation in GaAs nanowires.
    Chang CC, Chi CY, Yao M, Huang N, Chen CC, Theiss J, Bushmaker AW, Lalumondiere S, Yeh TW, Povinelli ML, Zhou C, Dapkus PD, Cronin SB.
    Nano Lett; 2012 Sep 12; 12(9):4484-9. PubMed ID: 22889241
    [Abstract] [Full Text] [Related]

  • 17. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 18. Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.
    Wang X, Wang ZM, Liang B, Salamo GJ, Shih CK.
    Nano Lett; 2006 Sep 10; 6(9):1847-51. PubMed ID: 16967989
    [Abstract] [Full Text] [Related]

  • 19. Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.
    Ren S, Zhao N, Crawford SC, Tambe M, Bulović V, Gradecak S.
    Nano Lett; 2011 Feb 09; 11(2):408-13. PubMed ID: 21171629
    [Abstract] [Full Text] [Related]

  • 20. Multiple quantum well AlGaAs nanowires.
    Chen C, Braidy N, Couteau C, Fradin C, Weihs G, LaPierre R.
    Nano Lett; 2008 Feb 09; 8(2):495-9. PubMed ID: 18184023
    [Abstract] [Full Text] [Related]

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