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161 related items for PubMed ID: 17064134
21. Controlled synthesis and photoluminescence properties of ZnS nanowires and nanoribbons. Kar S, Chaudhuri S. J Phys Chem B; 2005 Mar 03; 109(8):3298-302. PubMed ID: 16851356 [Abstract] [Full Text] [Related]
22. Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer. Cheng HM, Hsu HC, Tseng YK, Lin LJ, Hsieh WF. J Phys Chem B; 2005 May 12; 109(18):8749-54. PubMed ID: 16852037 [Abstract] [Full Text] [Related]
31. Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer. Cha SN, Song BG, Jang JE, Jung JE, Han IT, Ha JH, Hong JP, Kang DJ, Kim JM. Nanotechnology; 2008 Jun 11; 19(23):235601. PubMed ID: 21825796 [Abstract] [Full Text] [Related]
34. Synthesis and characterization of taper- and rodlike si nanowires on Si(x)Ge(1-x) substrate. Chueh YL, Chou LJ, Hsu CM, Kung SC. J Phys Chem B; 2005 Nov 24; 109(46):21831-5. PubMed ID: 16853835 [Abstract] [Full Text] [Related]
35. Aligned AlN nanowires by self-organized vapor-solid growth. Yazdi GR, Persson PO, Gogova D, Fornari R, Hultman L, Syväjärvi M, Yakimova R. Nanotechnology; 2009 Dec 09; 20(49):495304. PubMed ID: 19904025 [Abstract] [Full Text] [Related]
36. Compensation mechanism in N-doped ZnO nanowires. Gao J, Zhang X, Sun Y, Zhao Q, Yu D. Nanotechnology; 2010 Jun 18; 21(24):245703. PubMed ID: 20484783 [Abstract] [Full Text] [Related]