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Journal Abstract Search

128 related items for PubMed ID: 17192982

  • 1. Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates.
    Sun Y, Kim HS, Menard E, Kim S, Adesida I, Rogers JA.
    Small; 2006 Nov; 2(11):1330-4. PubMed ID: 17192982
    [No Abstract] [Full Text] [Related]

  • 2. A printable form of single-crystalline gallium nitride for flexible optoelectronic systems.
    Lee KJ, Lee J, Hwang H, Reitmeier ZJ, Davis RF, Rogers JA, Nuzzo RG.
    Small; 2005 Dec; 1(12):1164-8. PubMed ID: 17193410
    [No Abstract] [Full Text] [Related]

  • 3. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan; 7(1):39-44. PubMed ID: 17212437
    [Abstract] [Full Text] [Related]

  • 4. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul; 4(7):899-903. PubMed ID: 18504720
    [No Abstract] [Full Text] [Related]

  • 5. Evolution of epitaxial InAs nanowires on GaAs 111B.
    Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.
    Small; 2009 Mar; 5(3):366-9. PubMed ID: 19152357
    [No Abstract] [Full Text] [Related]

  • 6. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
    Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725
    [Abstract] [Full Text] [Related]

  • 7. Highly end-doped silicon nanowires for field-effect transistors on flexible substrates.
    Celle C, Carella A, Mariolle D, Chevalier N, Rouvière E, Simonato JP.
    Nanoscale; 2010 May 14; 2(5):677-80. PubMed ID: 20648308
    [Abstract] [Full Text] [Related]

  • 8. High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
    Funk S, Royo M, Zardo I, Rudolph D, Morkötter S, Mayer B, Becker J, Bechtold A, Matich S, Döblinger M, Bichler M, Koblmüller G, Finley JJ, Bertoni A, Goldoni G, Abstreiter G.
    Nano Lett; 2013 May 14; 13(12):6189-96. PubMed ID: 24274328
    [Abstract] [Full Text] [Related]

  • 9. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2015 Mar 11; 15(3):1979-86. PubMed ID: 25650521
    [Abstract] [Full Text] [Related]

  • 10. Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors.
    Morkötter S, Jeon N, Rudolph D, Loitsch B, Spirkoska D, Hoffmann E, Döblinger M, Matich S, Finley JJ, Lauhon LJ, Abstreiter G, Koblmüller G.
    Nano Lett; 2015 May 13; 15(5):3295-302. PubMed ID: 25923841
    [Abstract] [Full Text] [Related]

  • 11. Nanolasers grown on silicon-based MOSFETs.
    Lu F, Tran TT, Ko WS, Ng KW, Chen R, Chang-Hasnain C.
    Opt Express; 2012 May 21; 20(11):12171-6. PubMed ID: 22714204
    [Abstract] [Full Text] [Related]

  • 12. A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor.
    See AM, Klochan O, Micolich AP, Aagesen M, Lindelof PE, Hamilton AR.
    J Phys Condens Matter; 2013 Dec 18; 25(50):505302. PubMed ID: 24275246
    [Abstract] [Full Text] [Related]

  • 13. Influence of metal deposition on exciton-surface plasmon polariton coupling in GaAs/AlAs/GaAs core-shell nanowires studied with time-resolved cathodoluminescence.
    Estrin Y, Rich DH, Kretinin AV, Shtrikman H.
    Nano Lett; 2013 Apr 10; 13(4):1602-10. PubMed ID: 23516975
    [Abstract] [Full Text] [Related]

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  • 15. Enhancement-mode silicon nanowire field-effect transistors on plastic substrates.
    Chung EA, Koo J, Lee M, Jeong DY, Kim S.
    Small; 2009 Aug 17; 5(16):1821-4. PubMed ID: 19408257
    [No Abstract] [Full Text] [Related]

  • 16. Transparent electronics based on transfer printed aligned carbon nanotubes on rigid and flexible substrates.
    Ishikawa FN, Chang HK, Ryu K, Chen PC, Badmaev A, Gomez De Arco L, Shen G, Zhou C.
    ACS Nano; 2009 Jan 27; 3(1):73-9. PubMed ID: 19206251
    [Abstract] [Full Text] [Related]

  • 17. Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.
    Dey AW, Svensson J, Ek M, Lind E, Thelander C, Wernersson LE.
    Nano Lett; 2013 Jan 27; 13(12):5919-24. PubMed ID: 24224956
    [Abstract] [Full Text] [Related]

  • 18. Super deformability and Young's modulus of GaAs nanowires.
    Wang YB, Wang LF, Joyce HJ, Gao Q, Liao XZ, Mai YW, Tan HH, Zou J, Ringer SP, Gao HJ, Jagadish C.
    Adv Mater; 2011 Mar 18; 23(11):1356-60. PubMed ID: 21400595
    [No Abstract] [Full Text] [Related]

  • 19. Top-down fabrication of semiconductor nanowires with alternating structures along their longitudinal and transverse axes.
    Sun Y, Graff RA, Strano MS, Rogers JA.
    Small; 2005 Nov 18; 1(11):1052-7. PubMed ID: 17193393
    [No Abstract] [Full Text] [Related]

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