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Journal Abstract Search

463 related items for PubMed ID: 17199246

  • 1. High electron mobility InAs nanowire field-effect transistors.
    Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D.
    Small; 2007 Feb; 3(2):326-32. PubMed ID: 17199246
    [Abstract] [Full Text] [Related]

  • 2. InAs nanowire transistors as gas sensor and the response mechanism.
    Du J, Liang D, Tang H, Gao XP.
    Nano Lett; 2009 Dec; 9(12):4348-51. PubMed ID: 19739664
    [Abstract] [Full Text] [Related]

  • 3. Correlating the nanostructure and electronic properties of InAs nanowires.
    Schroer MD, Petta JR.
    Nano Lett; 2010 May 12; 10(5):1618-22. PubMed ID: 20384350
    [Abstract] [Full Text] [Related]

  • 4. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.
    Nano Lett; 2007 Oct 12; 7(10):3214-8. PubMed ID: 17867718
    [Abstract] [Full Text] [Related]

  • 5. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan 12; 2(1):85-8. PubMed ID: 17193560
    [No Abstract] [Full Text] [Related]

  • 6. Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.
    Park YK, Umar A, Kim SH, Kim JH, Lee EW, Vaseem M, Hahn YB.
    J Nanosci Nanotechnol; 2008 Nov 12; 8(11):6010-6. PubMed ID: 19198339
    [Abstract] [Full Text] [Related]

  • 7. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 12; 4(5):642-8. PubMed ID: 18431721
    [Abstract] [Full Text] [Related]

  • 8. Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
    Egard M, Johansson S, Johansson AC, Persson KM, Dey AW, Borg BM, Thelander C, Wernersson LE, Lind E.
    Nano Lett; 2010 Mar 10; 10(3):809-12. PubMed ID: 20131812
    [Abstract] [Full Text] [Related]

  • 9. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 10; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 10. Diameter-dependent electron mobility of InAs nanowires.
    Ford AC, Ho JC, Chueh YL, Tseng YC, Fan Z, Guo J, Bokor J, Javey A.
    Nano Lett; 2009 Jan 10; 9(1):360-5. PubMed ID: 19143505
    [Abstract] [Full Text] [Related]

  • 11. Shear stress measurements on InAs nanowires by AFM manipulation.
    Bordag M, Ribayrol A, Conache G, Fröberg LE, Gray S, Samuelson L, Montelius L, Pettersson H.
    Small; 2007 Aug 10; 3(8):1398-401. PubMed ID: 17657751
    [No Abstract] [Full Text] [Related]

  • 12. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK, Hong FC.
    Nanotechnology; 2009 May 13; 20(19):195302. PubMed ID: 19420638
    [Abstract] [Full Text] [Related]

  • 13. Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment.
    Tu R, Zhang L, Nishi Y, Dai H.
    Nano Lett; 2007 Jun 13; 7(6):1561-5. PubMed ID: 17488051
    [Abstract] [Full Text] [Related]

  • 14. III-V nanowire growth mechanism: V/III ratio and temperature effects.
    Dayeh SA, Yu ET, Wang D.
    Nano Lett; 2007 Aug 13; 7(8):2486-90. PubMed ID: 17608541
    [Abstract] [Full Text] [Related]

  • 15. Fully depleted nanowire field-effect transistor in inversion mode.
    Hayden O, Björk MT, Schmid H, Riel H, Drechsler U, Karg SF, Lörtscher E, Riess W.
    Small; 2007 Feb 13; 3(2):230-4. PubMed ID: 17199244
    [No Abstract] [Full Text] [Related]

  • 16. Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping.
    Yan Q, Huang B, Yu J, Zheng F, Zang J, Wu J, Gu BL, Liu F, Duan W.
    Nano Lett; 2007 Jun 13; 7(6):1469-73. PubMed ID: 17461605
    [Abstract] [Full Text] [Related]

  • 17. Hybrid permeable-base transistors based on an indenofluorene derivative.
    Serbena JP, Hümmelgen IA, Hadizad T, Wang ZY.
    Small; 2006 Mar 13; 2(3):372-4. PubMed ID: 17193053
    [No Abstract] [Full Text] [Related]

  • 18. Adsorption of ammonia on graphene.
    Romero HE, Joshi P, Gupta AK, Gutierrez HR, Cole MW, Tadigadapa SA, Eklund PC.
    Nanotechnology; 2009 Jun 17; 20(24):245501. PubMed ID: 19468162
    [Abstract] [Full Text] [Related]

  • 19. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.
    Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE.
    Nat Nanotechnol; 2007 Dec 17; 2(12):761-4. PubMed ID: 18654427
    [Abstract] [Full Text] [Related]

  • 20. Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.
    Lind E, Persson AI, Samuelson L, Wernersson LE.
    Nano Lett; 2006 Sep 17; 6(9):1842-6. PubMed ID: 16967988
    [Abstract] [Full Text] [Related]

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