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Journal Abstract Search

248 related items for PubMed ID: 17335270

  • 1. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 2. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 3. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 12; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 4. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 12; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 5. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct 12; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 6. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan 12; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 7. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 12; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 8. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar 12; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 9. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 12; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 10. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep 12; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 11. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.
    Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG.
    J Nanosci Nanotechnol; 2006 Dec 12; 6(12):3780-3. PubMed ID: 17256330
    [Abstract] [Full Text] [Related]

  • 12. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.
    Nano Lett; 2006 Apr 12; 6(4):599-604. PubMed ID: 16608251
    [Abstract] [Full Text] [Related]

  • 13. A generic approach for embedded catalyst-supported vertically aligned nanowire growth.
    Chung HS, Jung Y, Zimmerman TJ, Lee SH, Kim JW, Lee SH, Kim SC, Oh KH, Agarwal R.
    Nano Lett; 2008 May 12; 8(5):1328-34. PubMed ID: 18363342
    [Abstract] [Full Text] [Related]

  • 14. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 15. Shear stress measurements on InAs nanowires by AFM manipulation.
    Bordag M, Ribayrol A, Conache G, Fröberg LE, Gray S, Samuelson L, Montelius L, Pettersson H.
    Small; 2007 Aug 10; 3(8):1398-401. PubMed ID: 17657751
    [No Abstract] [Full Text] [Related]

  • 16. Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer.
    Li SY, Lin P, Lee CY, Ho MS, Tseng TY.
    J Nanosci Nanotechnol; 2004 Nov 10; 4(8):968-71. PubMed ID: 15656187
    [Abstract] [Full Text] [Related]

  • 17. Temperature-dependent growth direction of ultrathin ZnSe nanowires.
    Cai Y, Chan SK, Sou IK, Chan YF, Su DS, Wang N.
    Small; 2007 Jan 10; 3(1):111-5. PubMed ID: 17294480
    [No Abstract] [Full Text] [Related]

  • 18. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 19. The controlled growth of GaN nanowires.
    Hersee SD, Sun X, Wang X.
    Nano Lett; 2006 Aug 12; 6(8):1808-11. PubMed ID: 16895377
    [Abstract] [Full Text] [Related]

  • 20. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 12; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

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